PART |
Description |
Maker |
APT11GP60K APT11GP60SA |
MOSFET POWER MOS 7 IGBT 41 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Advanced Power Technolo... Advanced Power Technology MICROSEMI POWER PRODUCTS GROUP
|
APT50GP60B2DF2 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT11GP60BDQB |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology
|
APT83GU30B APT83GU30S |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technology
|
APT80GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT15GP90B |
MOSFET The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. 功率MOS 7 IGBT的是一个高压电源IGBT的新一代
|
Advanced Power Technology, Ltd.
|
APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
IRFR9210N IRFRU9120N IRFU9120N FR9120N |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) 功率MOSFET(减振钢板基本\u003d- 100V的,的Rds(on)\u003d 0.48ohm,身份证\u003d- 6.6A P Channel Straight Lead HEXFET Power MOSFET(P沟道HEXFET功率MOS场效应管) P通道直铅HEXFET功率MOSFET的性(P沟道的HEXFET功率马鞍山场效应管) P Channel Straight Lead HEXFET Power MOSFET(P娌??HEXFET???MOS?烘?搴??)
|
IRF International Rectifier, Corp.
|
2SK2941 2SK2941-ZJ-E2 2SK2941-ZJ-E1 2SK2941-ZJ-E1J |
Low voltage 4V drive power MOSFET MOS Field Effect Transistors SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
2SK2984 D12356EJ1V0DS00 2SK2984-ZJ 2SK2984-S 2SK29 |
Low voltage 4V drive power MOSFET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE From old datasheet system MOS Field Effect Transistor
|
NEC[NEC] NEC Corp.
|
APT15GP60K |
POWER MOS 7 IGBT
|
Advanced Power Technology
|